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Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTP55N075T
IXTY55N075T
V DSS
I D25
R DS(on)
= 75 V
= 55 A
≤ 19.5 m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-220 (IXTP)
D (TAB)
G
D S
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M Ω
Transient
75
75
± 20
V
V
V
TO-252 (IXTY)
G
I D25
I L
I DM
I AR
E AS
T C = 25 ° C
Package Current Limit, RMS TO-252
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
55
25
150
10
250
A
A
A
A
mJ
G = Gate
S = Source
S
D (TAB)
D = Drain
TAB = Drain
dv/dt
P D
T J
T JM
T stg
T L
T SOLD
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 175 ° C, R G =18 Ω
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
3
130
-55 ... +175
175
-55 ... +175
300
260
V/ns
W
° C
° C
° C
° C
° C
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
M d
Mounting torque (TO-220)
1.13 / 10 Nm/lb.in.
Space savings
High power density
Weight
TO-220
TO-252
3
0.35
g
g
Applications
Automotive
- Motor Drives
- 42V Power Bus
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
- ABS Systems
DC/DC Converters and Off-line UPS
BV DSS
V GS = 0 V, I D = 250 μ A
75
V
Primary Switch for 24V and 48V
Systems
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 25 μ A
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V
T J = 150 ° C
2.0
4.0
± 100
1
100
V
nA
μ A
μ A
High Current Switching
Applications
R DS(on)
V GS = 10 V, I D = 0.5 I D25 , Notes 1, 2
19.5
m Ω
DS99631 (11/06)
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